Archives for September 2012

The Alignment of Carbon Nano Tube between Aluminum Electrodes using AC Dielectrophoresis Method

September 26, 2012 By Editor

Abstract – This paper presents the recent development and fabrication of carbon nanotubes (CNT) based on electrical devices. The silicon oxide is formed by dry oxidation and the Aluminum (Al) layer is deposited using Thermal Evaporator. The electrodes pad act as a bridge for CNT alignment. Then, this single-walled carbon nanotubes (SWNTs) was suspended in isopropyl alcohol (IPA) and Dichloromethane (DCM) solution in ultrasonic condition around 1 hour continuously. Then, the aligment of the CNT was carried out using AC dielectrophoresis and DC electrophoresis method.

Keywords – CNT, DC electrophoresis method, AC dielectrophoresis method

Corresponding Author: Nur Hamidah Abdul Halim
Corresponding Author’s Email: nurhamidah@unimap.edu.my

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Fabrication and characterization of ONO and tunnel oxide for 16k FLOTOX EEPROM cell

September 25, 2012 By Editor

Abstract – The EEPROM process is one the hardest process to be developed. The performance of the EEPROM devices is normally judged on the programming speed, which relates to program high (erase) and program low (write) operations. It is essential that the program high and program low speed of the EEPROM cell is within 1ms with a programming voltage of not more than 16V. In this study, two experiments were setup to improve the programming speed. The first experiment was to increase the high voltage NMOS drain junction breakdown voltage with the source floating (HVNMOS BVDSF), and the second experiment was to scale down the ONO layer. The characterization work to increase the programming speed of the memory cell of 16k FLOTOX EEPROM has been carried out. P-field implant dose is optimized to have both the HVNMOS BVDSF and the p-field threshold voltage above 16V for fast programming. As a result, the threshold voltages of programming high and low operation are achieved at 4.35V and .0.77V respectively. Furthermore, by scaling down the nitride layer of ONO from 160Å to 130Å, the Vt program window is further improved to 4.5V and .0.94V for the program high and program low operations respectively.

Keywords – EEPROM, memory cell, threshold voltage, program high, program low, ONO, nitride layer.

Corresponding Author: R.M. Ayub
Corresponding Author’s Email: ramzan@unimap.edu.my

Full text: PDF

A Practical-Oriented Industry Relevant Teaching of Microelectronic Engineering In Malaysia: A Complete First Cycle Experience

September 24, 2012 By Editor

Abstract – Significant change in Malaysia’s Microelectronic industry at the turn of the century has created new challenges for the institutions in the region. To cater for the resulting workforce market changes, the development and implementation of a new four year Bachelor of Engineering in Microelectronic Engineering curriculum at the Kolej Universiti Kejuruteraan Utara Malaysia is herein reported. The curriculum incorporates general electronics subjects with specialized subjects on microelectronic design, fabrication, MEMS and failure analysis. Skills development is increased through inclusion of significant practical components in every technical course. ‘Teaching-fab’, chip design and failure analysis facilities plus a fully functioning ‘teaching-factory’ are build for educational purposes. Active collaborations with the industry are the key elements of the implementation. The total enrollment is 408 students and the first batch of 108 students will be graduating in July 2006. This paper will address the issues and challenges faced in the design, approval and implementation of the program.

Index Terms – Practical oriented, Industry relevant, Microelectronic engineering, Complete cycle.

Corresponding Author: U. Hashim
Corresponding Author’s Email: uda@unimap.edu.my

Full text: PDF

Nano Malaysia Summit and Expo 2012

September 18, 2012 By Editor

The National Nanotechnology Directorate will organize the NanoMalaysia Summit and Expo 2012 in conjunction with the World Innovation Forum Kuala Lumpur 2012 (WIF-KL 2012) to be held at Kuala Lumpur Convention Centre (KLCC), from 5 to 7 November 2012. The Summit is a platform for exploring business opportunities and networking between public, corporate sectors, investors, small and medium industries and researchers from academia. It is also an event for everyone to share common interest in nanoscience and nanotechnology. The Nano Exhibition desires to demonstrate and create awareness on the unseen power of nanotechnology to our lives and well-being.

The event will feature several activities:

Talks by Plenary and Invited Speakers
NanoMalaysia Summit
Nanotech Malaysia, Education and Awareness Exhibition
NanoMalaysia R&D Symposium
Health, Safety and Environmental (HSE) and Nano Industry Forum
Annual Meeting of Malaysia Nanotechnology Association