On November 21, 2023, several staff members from the Institute of Nano Electronic Engineering (INEE) were involved in the success of STEM with Community as part of the UniMAP Convocation Festival (FESTKON UniMAP 2023).






Institute of Nano Electronic Engineering
Universiti Malaysia Perlis
By Editor
On November 21, 2023, several staff members from the Institute of Nano Electronic Engineering (INEE) were involved in the success of STEM with Community as part of the UniMAP Convocation Festival (FESTKON UniMAP 2023).
By Editor
Abstract – Silicon-on-Insulator (SOI) technology provides a solution for controlling Short-Channel Effects (SCEs) and enhancing the performance of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). However, scaling down SOI MOSFETs to a nanometer scale does not necessarily yield further scaling benefits. Introducing multiple gates, such as a double gate configuration, can effectively mitigate SCEs. Nonetheless, fabricating a flawless double gate structure is an exceedingly challenging endeavor that remains unrealized. The adoption of a back gate bias, with an asymmetrical thickness arrangement between the front and back gates, mimicking the behavior of a double gate, offers an alternative approach. This approach has the potential to modify the electrical characteristics of the device, thus potentially leading to improved control over SCEs. In this study, we employed 2D simulations using Atlas to investigate the influence of back gate biases, namely, -2.0 V, 0 V, and 2.0 V on a 10 nm silicon thickness at the top and a 20 nm buried oxide thickness for n-channel MOSFETs. We focused on key parameters, including threshold voltage (VTh), Drain Induced Barrier Lowering (DIBL), and Subthreshold Swing (SS). The results demonstrate that a negative back gate bias is the most favorable configuration, as it yields superior performance. This translates into more effectively controlled SCEs across all the parameters of interest.
Corresponding Author: Dr. Mohamad Faris Mohamad Fathil
Corresponding Author’s Email: mohamadfaris@unimap.edu.my
Download: PDF
Link to Publication: https://ijneam.unimap.edu.my/index.php/vol-16-no-4-october-2023
By Editor
We are excited to announce our upcoming International Symposium on Emerging Trends in Semiconductor Technology (MiCSETS 2023) which will be held online on 29 November 2023. COE Micro System Technology (MiCTEC) is proud to host this symposium in partnership with the Faculty of Electronic Engineering, Institute of Nano Electronic Engineering (INEE), IEEE Sensors & Nanotechnology Council Malaysia, and IEEE Electronics Packaging Society.
This symposium aims to bring together fellow researchers, industries, academicians, scholars, professionals, and key players in related fields across the region to share findings and generate networking on this platform and it is FREE. The participants of this symposium are eligible to earn 5 hours of CPD MBOT (approved).
E-certificate also will be given to all participants. Kindly complete your registration at the following link:
https://forms.gle/sE2pK3RCbH1jWCSM7
Full program details and speakers: https://drive.google.com/drive/folders/1dB6G8uJgUo3Bj8q1VZIuANXLaSTJEEqv?usp=share_link
Your involvement in MiCSETS 2023 is highly valued.
Thank you.
-MiCSETS for MiCTEC Symposium 2023 Committe-
COE Micro System Technology
Universiti Malaysia Perlis (UniMAP)
By Editor
From October 26th to November 9th, two research fellows from INEE and two lecturers from FKTEN conducted a collaborative research visit in Shandong, China, under the One Belt One Road Grant by the Chinese Government.
Shandong University (SDU) hosted this grant, and they were located at the School of Integrated Circuits from October 26th to November 10th. The cleanroom laboratories here are equipped with complete microelectronic fabrication equipment. The ongoing collaborative project at SDU focuses on Source-Gated Thin Film Transistors.
On November 6th, a visit took place at the Shandong University of Technology (SDUT). Discussions there primarily revolved around dual-degree programs in computer science. However, regarding research, Professor Liu is involved in the gas sensor field, which aligns with the research at INEE.
Subsequently, from November 7th to 9th, they transited to the Southern University of Science and Technology. The research collaboration discussed here pertains to quantum light-emitting diodes (QLED) for screen displays.
By Editor
Nine staff members from the Institute of Nano Electronic Engineering (INEE) were involved in the successful execution of the ‘Fun With STEM’ program at Maktab Rendah Sains MARA, Arau, Perlis on November 3, 2023. This program, involving 300 students from Form 1 & 2, aimed to spark and cultivate an interest among students in the field of STEM (Science, Technology, Engineering, and Mathematics) to foster creative and innovative learners. The event was jointly organized by the Faculty of Engineering and Electronic Technology of Unimap, led by Mr. Mohd Hafiz Ismail.
Institute of Nano Electronic Engineering, Universiti Malaysia Perlis
Lot 106, 108 & 110, Blok A, Taman Pertiwi Indah,
Jalan Kangar-Alor Setar, Seriab 01000 Kangar, Perlis, Malaysia
Tel: +604-979 8581 Fax: +604-979 8578 Email: webmaster.inee@unimap.edu.my