Abstract – Scaling of the transistor has been tremendous successful in the beginning with reduction of the
gate oxide thickness and increase of doping concentration. Moving into smaller dimension,
those are not enough to overcome the short channel effect. Starting with changing in
materials and followed by device architecture is needed which require fully depletion
operation. This article reviews the fully-depletion operation of thin body of silicon on
insulator of advanced MOSFETs.

Keywords – fully-depletion, SOI MOSFETs, thin-body and thin-buried oxide (UTBB)

Corresponding Author: Mohd Khairuddin Md Arshad
Corresponding Author’s Email: mohd.khairuddin@unimap.edu.my

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