Institute of Nano Electronic Engineering
Universiti Malaysia Perlis
Knowledge sharing by Dr Nur Syakimah which was held on June 26, 2015 at Seminar Room Tun Mahathir, Seriab.
A total of 30 people took part in a presentation at this time, mostly consisting of students and research fellows.
Dr Nur Syakimah at this time was willing to share its findings with the title Gold nanoparticles-functionalized graphene oxide nanoribbons for enhanced performance of electrochemical based biosensors.
Abstract – The study demonstrates the development of a liquid-based gate-control silicon nanowire biosensor for detection of specific single-stranded DNA (ssDNA) molecules. The sensor was fabricated using conventional photolithography coupled with an inductively coupled plasma dry etching process. Prior to the application of DNA to the device, its linear response to pH was confirmed by serial dilution from pH 2 to pH14. Then, the sensor surface was silanized and directly aminated with (3-aminopropyl) triethoxysilane to create a molecular binding chemistry for biofunctionalization. The resulting Si‒O‒Si‒ components were functionalized with receptor ssDNA, which interacted with the targeted ssDNA to create a field across the silicon nanowire and increase the current. The sensor shows selectivity for the target ssDNA in a linear range from target ssDNA concentrations of 100 pM to 25 nM. With its excellent detection capabilities, this sensor platform is promising for detection of specific biomarkers and other targeted proteins.
Keywords – Nanowire biosensor, APTES, ssDNA, DNA, Photolithography, Liquid gate control
Corresponding Author: Uda Hashim
Corresponding Author’s Email: uda@unimap.edu.my
Full text: PDF
Abstract – Scaling of the transistor has been tremendous successful in the beginning with reduction of the
gate oxide thickness and increase of doping concentration. Moving into smaller dimension,
those are not enough to overcome the short channel effect. Starting with changing in
materials and followed by device architecture is needed which require fully depletion
operation. This article reviews the fully-depletion operation of thin body of silicon on
insulator of advanced MOSFETs.
Keywords – fully-depletion, SOI MOSFETs, thin-body and thin-buried oxide (UTBB)
Corresponding Author: Mohd Khairuddin Md Arshad
Corresponding Author’s Email: mohd.khairuddin@unimap.edu.my
Full text: PDF
Abstract – Silicon nanowires based biosensors have garnered great potential in serving as highly sensitive, label-free and real-time response biosensing application. These biosensors are useful in detecting pH, DNA molecules, proteins and even single viruses. In this paper, we report the geometrical characteristics and performance of silicon nanowires array for pH level detection. The nanowires are designed for 40 nm, 50 nm and 60 nm diameter sizes. Top-Down Nanofabrication (TDN) is utilized in the development of resist mask and nanowires formation from silicon on insulator (SOI) wafer involving scanning electron microscope (SEM) based electron beam lithography (EBL). The smallest silicon nanowires structure achieved is 40 nm width and 30 nm height. The corresponding source and drain are fabricated via two aluminum (Al) electrodes on top of the silicon nanowires array using conventional lithography process. A 100 µm microfluidic channel is attached on the silicon nanowires for the sample solution transportation. pH level detection are performed based on several types of standard aqueous pH buffer solutions (pH 4, pH 7, pH 10 and pH 12) to test the electrical response of the sensor. Morphological and electrical responses have been proposed to verify the characteristics of the silicon nanowires array based pH sensor.
Keywords – Array, E-beam lithography, microfluidic channel, pH sensor, silicon nanowires
Corresponding Author: Mohd Khairuddin Md Arshad
Corresponding Author’s Email: mohd.khairuddin@unimap.edu.my
Full text: PDF
Abstract – The objective of this review is to study the evolution and key findings and critical technical challenges, solutions and future trend of bonding wires used in semiconductor electronics. Evolutions of bonding wires from Au to Cu and till the most recent silver (Ag) wire (perspective over 25 years packaging technology) have been discussed in this paper. The reliability performances of Au wire bonding, technical barriers of Cu wire bonding and corrosion mechanisms of Cu ball bonds are analyzed and covered. We focus on the influence of a variety of factors that have been reported recently, including reliability performance, wear out reliability performance that determine the selection of bonding wires to reach for developing high reliability of bonded devices. In the end of this review, the evolutions and future trends of bonding wires are compared and illustrated, which have marked
effect based on the materials properties as well as reliability of wire types.
Keywords – bonding wires, semiconductor electronics, packaging technology
Corresponding Author: Uda Hashim
Corresponding Author’s Email: uda@unimap.edu.my
Full text: PDF
