Editor, Author at Institute of Nano Electronic Engineering

Prof. Dr. Uda Hashim Raih Anugerah Sains Dan Teknologi ISESCO

December 4, 2012 By Editor

KANGAR, 28 Nov: Pengarah Institut Kejuruteraan Nano Elektronik (INEE), Universiti Malaysia Perlis (UniMAP), Prof. Dr. Uda Hashim terpilih untuk menerima anugerah Hadiah Laureate Sains dan Teknologi ISESCO 2012 daripada The Islamic Educational, Scientific and Cultural Organization (ISESCO) pada 20 November baru-baru ini.

Anugerah tersebut adalah bagi menghargai sumbangan besar beliau dalam bidang teknologi khususnya teknologi nano dan bakal meletakkan nama beliau sebaris dengan “ISES Science and Technology Laureate”.

Anugerah ini disampaikan oleh Prof Khamis Kajo Kunda, Menteri Pengajian Tinggi dan Penyelidikan Saintifik Sudan, sempena Sixth Islamic Conference of Ministers of Higher Education and Scientific Research yang berlangsung di Khartoum, Sudan, pada 20 hingga 21 November 2012.

Sebanyak 88 pencalonan telah diterima oleh pihak penganjur dari negara negara anggota OIC, tetapi hanya empat penerima telah terpilih untuk memenagi hadiah Laureate pada tahun ini yang mewakili bidang masing-masing iaitu dari Pakistan untuk bidang Matematik, Jordan untuk bidang Biologi, calon Azerbaijan untuk bidang kimia dan Prof Dr Uda dari Malaysia untuk bidang teknologi.

Bagi Prof. Dr. Uda, anugerah tersebut merupakan satu penghargaan yang besar bukan sahaja bagi beliau secara peribadi, tetapi ia juga sekaligus dapat mengharumkan nama Malaysia amnya dan UniMAP khususnya di peringkat antarabangsa.

Ini merupakan petanda awal yang Malaysia khususnya UniMAP mampu untuk melahirkan calon nobel laureate pada masa akan datang. UniMAP sedang dan akan merangka beberapa perancangan untuk mencapai impian dan hasrat ini.

“Saya berasa bersyukur dan berbangga kerana hasil sumbangan penyelidikan kita semakin mendapat tempat dah diiktiraf di peringkat antarabangsa sebaris dengan penyelidik-penyelidik barat.

Harapan saya, semoga lebih banyak lagi hasil penyelidikan penyelidik Islam khususnya dari Malaysia akan diiktiraf pada masa akan datang,” katanya ketika dihubungi.

Preparation of iron oxide nanoparticles supported on magnesium oxide for producing high-quality single-walled carbon nanotubes

November 22, 2012 By Editor

Abstract – Fe3O4 nanoparticles with a narrow diameter distribution having an average diameter of 10.33 nm ± 2.99 nm (average diameter ± standard deviation) were prepared by a precipitation method. The Fe3O4 nanoparticles were supported on MgO by mixing the MgO nanopowder with the required amount of Fe3O4 nanoparticles in water under extensive sonication. Single-walled carbon nanotubes (SWCNTs) were synthesized by the chemical vapor deposition (CVD) of methane over the Fe3O4/MgO catalyst. Transmission electron microscopy showed that a large number of SWCNT bundles of nearly uniform diameter were produced by the CVD method. The average diameter of the produced SWCNTs was ca. 1.22 nm. Thermogravimetric analysis showed that the weight loss was approximately 19% by oxidation of carbon in the temperature range of 400-680 oC. The ratio of the intensity of the D-band to the G-band was 0.03, indicating that the SWCNTs were well-graphitized.

Keywords – Single-walled carbon nanotubes, Chemical vapor deposition, Electron microscopy, Raman spectroscopy

Corresponding Author: Liu Wei Wen
Corresponding Author’s Email: wwliu@unimap.edu.my

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Anbar University Lecturers Join Nanomaterial Technology Short Course

October 31, 2012 By Editor

Anbar University Lecturers Join Nanomaterial Technology Short Course
Institute of Nano Electronic Engineering (INEE) has organized a short course for nine lecturers from the University of Anbar, Iraq in the field of nanomaterial technology on 15 to 25 October 2012 ago.

Whole course took about nine days, where the theory held in the morning, while the practical side of the lab INEE held in the afternoon. In theory, the participant was revealed in all aspects of nanomaterial technology that covers the mathematical model, the basic theory of materials, materials synthesis, physical and electrical characterization methods. Facility design basis for clean rooms and other critical facility in the field of nanotechnology fabrication is also presented.

In the practical aspect, participants exposed to the fabrication technology of nano as photolithography, etching, oxidation, metallization and the like.

Overall, participants very satisfied with the course conducted and admitted that many things have been learned. They also praised the progress that has been achieved by UniMAP in particular, and Malaysia in general.

INEE are expected to hold the same course to the second group of Anbar University in November 2012.

Anbar University Lecturers Join Nanomaterial Technology Short Course

Prepared by:
Ramzan Mat Ayub
Deputy Director
ramzan@unimap.edu.my

Download report: Anbar University Nanomateril Technology Short Course Report (Malay)

Fabrication and Characterization of 50 nm Silicon Nano-Gap Structures

October 24, 2012 By Editor

Abstract – A simple method for the fabrication of nano-gaps less than 50 nm by using conventional photolithography combined with patterned-size reduction techniques is presented. Silicon material is used to fabricate the nano-gap structure and gold is used for the electrode. Two chrome masks are proposed to complete this work, the first mask for the nano-gap pattern and a second mask for the electrode. The method is based on the control of the coefficients (temperature and time) with an improved pattern size resolution by thermal oxidation. With this technique, there are no principal limitations to fabricating anostructures with different layouts down to several nanometers in dimension. In this work, the proposed method is experimentally demonstrated by preparing the nano-gaps on a Si–SiO2 substrate down to dimensions of 50 nm. The optical characterization that is applied to check the nano-gap structure is by using the scanning electron microscope (SEM).

Keywords – Nano-Gap, Pattern-Size Reduction, Nanostructure, Optical Characterization, Photolithography.

Corresponding Author: Uda Hashim
Corresponding Author’s Email: uda@unimap.edu.my

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Carbon nano dots scale by focused ion beam system for MIS diode nano devices

October 3, 2012 By Editor

Abstract – Metal-insulator-semiconductor (MIS) structures with a nanocrystal carbon (nc-C) embedded in SiO2 thin films were fabricated using a focused ion beam (FIB) system with a precursor of low-energy Ga+ ion and carbon source. The crystallinity of nc-C was investigated by Raman spectroscopy and atomic force microscopy (AFM). Raman spectra indicate the evidence of crystallization of nc-C after annealed at 600˚C by the sharp peak at 1565 cm-1 in graphite (sp2), while no peak of diamond (sp3) could be seen at 1333 cm-1. The AFM images showed the nc-C dots controlled with diameter of 100 nm, 200 nm and 300 nm, respectively. The above results revealed that the nc-C dots had sufficiently stuck onto SiO2 films. The hysterisis loop in the capacitance–voltage characteristics appeared in the MIS device with SiO2/nc-C/SiO2 structure in which voltage shift is 0.32 V for radical oxidation and 0.14 V for dry oxidation, respectively.

Keywords – Carbon; Nanocrystal; Memory device; Focused ion beam; Raman spectroscopy; Atomic force microscopy

Corresponding Author: Ruslinda Abdul Rahim
Corresponding Author’s Email: ruslinda@unimap.edu.my

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