Institute of Nano Electronic Engineering

Universiti Malaysia Perlis

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Archives for September 2016

Formation of nanocrystalline GeSn thin film on Si substrate by sputtering and rapid thermal annealing

September 25, 2016 By Editor

Abstract – Nanocrystalline Ge1-xSnx thin films have been formed after rapid thermal annealing of sputtered GeSn layers. The alloy films were deposited onto the Silicon (100) substrate via low cost radio frequency magnetron sputtering. Then, the films were annealed by rapid thermal annealing at 350 °C, 400 °C, and 450 °C for 10 s. The morphological, structural, and optical properties of the layers were investigated with field emission scanning electron microscopy (FESEM), Energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy, and high-resolution X-ray diffraction (HR-XRD). The Raman analysis showed that the only observed phonon mode is attributed to Ge-Ge vibrations. Raman phonon intensities of GeSn thin films were enhanced with increasing the annealing temperature. The results clearly revealed that by increasing the annealing temperature the crystalline quality of the films were improved. The XRD measurements revealed the nanocrystalline phase formation in the annealed films with (111) preferred orientation. The results showed the potentiality of using the sputtering technique and rapid thermal anneal to produce crystalline GeSn layer.

Keywords – Germanium-tin, HR-XRD, Nanocrystalline materials, Raman spectroscopy, Sputtering, Thin films

Corresponding Author: Uda Hashim
Corresponding Author’s Email: uda@unimap.edu.my

Full text: PDF

Filed Under: Publications Tagged With: Germanium-tin, HR-XRD, Nanocrystalline materials, Raman spectroscopy, Sputtering, Thin films

Official Visit by Malaysian Investment Development Authority (MIDA)

September 22, 2016 By Editor

MIDA 01

MIDA 02

MIDA 03

MIDA 04

Filed Under: Visit Tagged With: Malaysian Investment Development Authority, MIDA, slides

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