Institute of Nano Electronic Engineering

Universiti Malaysia Perlis

  • Facebook
  • Instagram
  • Twitter
  • YouTube
  • About Us
    • Background
    • Mission and Vision
    • Organization
    • Client’s Charter
    • Corporate Video
    • Our Expertise
    • Acknowledgement
  • Research
    • Research Facilities
    • Research Activities
      • Research Focus
      • Research Projects
        • Products
      • Postgraduate
        • Current Students
        • Alumni
      • Collaborations
  • Publications
    • Scoreboard
  • Contact Us
    • Staff Directory
    • Feedback
  • Gallery
    • Video
    • Audio
  • Download
    • Archive
    • Publications
    • Forms
    • OBE Awareness
    • Reports
  • Quick Links
    • Support Links
    • FAQ
    • Sitemap
    • Faculty
    • Other Departments
    • Events

The ZnO-FET Biosensor for Cardiac Troponin I

July 23, 2018 By Editor

Abstract – This paper investigates the influence of substrate-gate coupling on the ZnO-FET biosensor’s sensitivity for detection of cardiac troponin I (cTnI), a ‘gold standard’ biomarker for acute myocardial infarction (AMI). The FET-based device with introduction of substrate-gate coupling on p-type silicon-on-insulator (SOI) substrate is fabricated using conventional lithography processes. An n-type zinc oxide (ZnO) thin film deposited via electron-beam evaporator is used as transducer for bridging the source and drain regions. Surface modifications via functionalization with 3-aminopropyltriethoxysilane (APTES) and glutaraldehyde (GA) as chemical linkers, followed by immobilization of cTnI monoclonal antibody (MAb-cTnI) as bio-receptor on the ZnO thin film allow different concentration of cTnI detection with high selectivity. The device’s sensitivity increases up to 9 %•(g/ml)-1 with the increase of the substrate-gate voltage (VSG) up to -10 V at very low limit of detection (LOD) down to 1.6 fg/ml.

Corresponding Author: Mohamad Faris Mohamad Fathil
Corresponding Author’s Email: mohamadfaris@unimap.edu.my

Download: PDF

Filed Under: Publications Tagged With: Biosensors, Chemical modification, II-VI semiconductors, Lithography, Monoclonal antibodies, Silicon on insulator technology, Substrates, Thin films, Zinc oxide

Formation of nanocrystalline GeSn thin film on Si substrate by sputtering and rapid thermal annealing

September 25, 2016 By Editor

Abstract – Nanocrystalline Ge1-xSnx thin films have been formed after rapid thermal annealing of sputtered GeSn layers. The alloy films were deposited onto the Silicon (100) substrate via low cost radio frequency magnetron sputtering. Then, the films were annealed by rapid thermal annealing at 350 °C, 400 °C, and 450 °C for 10 s. The morphological, structural, and optical properties of the layers were investigated with field emission scanning electron microscopy (FESEM), Energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy, and high-resolution X-ray diffraction (HR-XRD). The Raman analysis showed that the only observed phonon mode is attributed to Ge-Ge vibrations. Raman phonon intensities of GeSn thin films were enhanced with increasing the annealing temperature. The results clearly revealed that by increasing the annealing temperature the crystalline quality of the films were improved. The XRD measurements revealed the nanocrystalline phase formation in the annealed films with (111) preferred orientation. The results showed the potentiality of using the sputtering technique and rapid thermal anneal to produce crystalline GeSn layer.

Keywords – Germanium-tin, HR-XRD, Nanocrystalline materials, Raman spectroscopy, Sputtering, Thin films

Corresponding Author: Uda Hashim
Corresponding Author’s Email: uda@unimap.edu.my

Full text: PDF

Filed Under: Publications Tagged With: Germanium-tin, HR-XRD, Nanocrystalline materials, Raman spectroscopy, Sputtering, Thin films

NEWS @ INEE

  • Research Collaboration Between INEE and Thaksin University
  • Congratulations to Assoc. Prof. Ts. Dr. Muhammad Mahyiddin Ramli Awarded Research Grant
  • Congratulations to Assoc. Prof. Dr. Shahrir Rizal Kasjo Awarded International Research Grant
  • Postgraduate Studies Opportunity
  • Congratulations Prof. Ir. Dr. Mohd Khairuddin Md Arshad

EVENTS & ACTIVITIES

  • Call For Paper International Conference on Nanotechnology & Materials Research (IconMAR 2023)
  • Call for Paper IEEE International Conference on Sensor & Nanotechnology (SenNano2023)
  • Call for Papers 2022 Joint International Conference on Nanoscience & Nanoengineering (BOND 21 2022)
  • Trace Analysis and Biosensor International Symposium I: Emerging Challenges and Opportunities
  • CSR & STEM Programme: Exploration in The Nano World
Privacy Policy | Security Policy | Disclaimer | Sitemap | FAQ | Feedback | User Guide | Download | Postgraduate

Institute of Nano Electronic Engineering, Universiti Malaysia Perlis
Lot 106, 108 & 110, Blok A, Taman Pertiwi Indah,
Jalan Kangar-Alor Setar, Seriab 01000 Kangar, Perlis, Malaysia
Tel: +604-979 8581 Fax: +604-979 8578 Email: webmaster.inee@unimap.edu.my

Copyright © INEE UniMAP

  • Facebook
  • Instagram
  • Twitter
  • YouTube

For best view, please use latest version of Internet Explorer, Mozilla Firefox and Google Chrome with resolution 1280 x 768 and above.

QS 5 Stars

MQA

MSC Malaysia

myGov

Logo UniMAP

Visits Total 240928

Designed by Mohd Isa from Portal Kerjaya & Sumber Rujukan Malaysia