Institute of Nano Electronic Engineering

Universiti Malaysia Perlis

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On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II-Effect of Drain Voltage

January 2, 2015 By Editor

Abstract – In this paper, we study the effect of the drain voltage on the threshold voltage extraction in long-channel MOSFETs by the transconductance change and transconductance-to-current ratio change methods, using analytical modeling and experimental data obtained on advanced UTB SOI MOSFETs. It is shown that, although these two methods have the same physical background, they feature radically different behaviors with respect to the drain voltage effect. In particular, the transconductance change method yields a threshold voltage value, which regularly increases with drain voltage, and interpretation, as well as analytical expression for this dependence, is provided. In contrast, for the transconductance-to-current ratio change method, the increase of the extracted threshold voltage value with drain voltage is smaller and rapidly saturates; hence, the threshold voltage extraction is more stable and reliable. Modeling derivations are found to be in excellent agreement withmeasurements on long-channel UTB SOI MOSFETs as well as 2-D simulations.

Keywords – MOSFET threshold voltage extraction, transconductance change method, transconductance-to-current ratio, unified charge control model (UCCM).

Corresponding Author: Mohd Khairuddin Md Arshad
Corresponding Author’s Email: mohd.khairuddin@unimap.edu.my

Full text: PDF

Filed Under: Publications Tagged With: MOSFET threshold voltage extraction, transconductance change method, transconductance-to-current ratio, unified charge control model (UCCM).

Synthesis and characterization of graphene and carbon nanotubes: A review on the past and recent developments

December 24, 2014 By Editor

Abstract – Carbon nanotubes (CNTs) and graphene have built broad interest in most areas of science and engineering because of their extraordinary physical, mechanical, thermal and optical properties. Graphene is a two-dimensional one-atom-thick planar sheet of sp2-bonded carbon atoms while CNTs are a cylindrical nanostructure which composed entirely of sp2-bonded carbon atoms as well. This review presents and discusses the past and current advancement of synthesis and characterization of graphene and CNTs. The review also concludes with a brief summary and an outlook on the challenges and future
prospects in the growth of graphene and CNTs.

Keywords – carbon nanotubes, cnt, graphene oxide, reduced graphene oxide

Corresponding Author: Liu Wei Wen
Corresponding Author’s Email: wwliu@unimap.edu.my

Full text: PDF

Filed Under: Publications Tagged With: carbon nanotubes, CNT, graphene oxide, reduced graphene oxide

Sol–gel synthesis of Pd doped ZnO nanorods for room temperature hydrogen sensing applications

December 23, 2014 By Editor

Abstract – A sol-gel spin coating technique was described for the synthesis of Pd doped ZnO nanorods for hydrogen sensing applications. The nanorods were hexagonal in shape, 50–100 nm in diameter and uniform in distribution. They exhibited homogeneous surface morphology, c-axis orientation and excellent crystalline properties. The synthesized nanorods were used to sense and detect hydrogen in a homemade gas chamber. The fabricated sensor successfully detected as low as 40 ppm hydrogen at room temperature with a very low level of power supply (16.16 mA) under a mixed background. Dynamic and repeated responses were observed with a wide range of hydrogen concentrations (40–360 ppm) at 200 C. The developed sensor was at least 25 fold more sensitive over the literature documented Pd doped ZnO nanorods in detecting hydrogen at ambient temperature. The simplicity, low-cost, high sensitivity and high stability of the sensor materials suggested that the synthesized Pd doped ZnO nanorods could be used in hydrogen and chemical sensing devices where Pd-mediated catalysis is involved.

Keywords – Pd doped ZnO nanorods, Hydrogen sensors, Sol–gel, Spin coating

Corresponding Author: Uda Hashim
Corresponding Author’s Email: uda@unimap.edu.my

Full text: PDF

Filed Under: Publications Tagged With: Hydrogen sensors, Pd doped ZnO nanorods, Sol–gel, Spin coating

Functionalised zinc oxide nanotube arrays as electrochemical sensors for the selective determination of glucose

September 9, 2014 By Editor

Abstract – In the present study, highly oriented single-crystal zinc oxide nanotube (ZnO-NT) arrays were prepared by a trimming of ZnO nanorods along the c-axis on the gold-coated glass substrate having a diameter of 100–200nm and a length of ~1µm using a low-temperature aqueous chemical growth process. The prepared (ZnO-NT) arrays were further used as electrochemical enzyme-based glucose sensors through immobilisation of glucose oxidase by the physical adsorption method in conjunction with a Nafion coating. The electrochemical response of the sensor was found to be linear over a relatively wide logarithmic concentration range from 0.5×10-6 to 12×10-3 M. The proposed sensor showed a high sensitivity of 69.12 mV/decade with R=0.9934 for sensing of glucose. A fast-response time less than 4s with good selectivity, reproducibility and negligible response to common interferents such as ascorbic acid and uric acid prevailed.

Keywords – zinc oxide nanotube, chemical, glucose

Corresponding Author: Uda Hashim
Corresponding Author’s Email: uda@unimap.edu.my

Full text: PDF

Filed Under: Publications Tagged With: chemical, glucose, zinc oxide nanotube

Nanogaps Formation Using Scanning Electron Microscope (SEM) Based E-Beam Lithography (EBL) Technique

July 17, 2014 By Editor

Abstract – The semiconductor industry and wafer fabrication developments are driven by customer’s needs. Customers require faster, more reliable and lower cost chips. To achieve this, chip manufacturers and researchers have learned to reduce the size and dimension of component on the chip. The physical dimension of a feature on the chip is referred to as the feature size.[…]

Keywords – semiconductor, fabrication

Corresponding Author: Mohammad Nuzaihan Md Nor
Corresponding Author’s Email: m.nuzaihan@unimap.edu.my

Full text: PDF

Filed Under: Publications Tagged With: fabrication, semiconductor

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Institute of Nano Electronic Engineering, Universiti Malaysia Perlis
Lot 106, 108 & 110, Blok A, Taman Pertiwi Indah,
Jalan Kangar-Alor Setar, Seriab 01000 Kangar, Perlis, Malaysia
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