Editor, Author at Institute of Nano Electronic Engineering

Cell-targeting aptamers act as intracellular delivery vehicles

July 25, 2016 By Editor

Abstract – Aptamers are single-stranded nucleic acids or peptides identified from a randomized combinatorial library through specific interaction with the target of interest. Targets can be of any size, from small molecules to whole cells, attesting to the versatility of aptamers for binding a wide range of targets. Aptamers show drug properties that are analogous to antibodies, with high specificity and affinity to their target molecules. Aptamers can penetrate disease-causing microbial and mammalian cells. Generated aptamers that target surface biomarkers act as cell-targeting agents and intracellular delivery vehicles. Within this context, the “cell-internalizing aptamers” are widely investigated via the process of cell uptake with selective binding during in vivo systematic evolution of ligands by exponential enrichment (SELEX) or by cell-internalization SELEX, which targets cell surface antigens to be receptors. These internalizing aptamers are highly preferable for the localization and functional analyses of multiple targets. In this overview, we discuss the ways by which internalizing aptamers are generated and their successful applications. Furthermore, theranostic approaches featuring cell-internalized aptamers are discussed with the purpose of analyzing and diagnosing disease-causing pathogens.

Keywords – Aptamer, Internalization, Receptor, SELEX, Surface antigen

Corresponding Author: Subash C B Gopinath
Corresponding Author’s Email: subash@unimap.edu.my

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Electrical detection of dengue virus (DENV) DNA oligomer using silicon nanowire biosensor with novel molecular gate control

June 21, 2016 By Editor

Abstract – In this paper, a silicon nanowire biosensor with novel molecular gate control has been demonstrated for Deoxyribonucleic acid (DNA) detection related to dengue virus (DENV). The silicon nanowire was fabricated using the top-down nanolithography approach, through nanostructuring of silicon-on-insulator (SOI) layers achieved by combination of the electron-beam lithography (EBL), plasma dry etching and size reduction processes. The surface of the fabricated silicon nanowire was functionalized by means of a three-step procedure involving surface modification, DNA immobilization and hybridization. This procedure acts as a molecular gate control to establish the electrical detection for 27-mers base targets DENV DNA oligomer. The electrical detection is based on the changes in current, resistance and conductance of the sensor due to accumulation of negative charges added by the immobilized probe DNA and hybridized target DNA. The sensitivity of the silicon nanowire biosensors attained was 45.0 μA M-1, which shows a wide-range detection capability of the sensor with respect to DNA. The limit of detection (LOD) achieved was approximately 2.0 fM. The demonstrated results show that the silicon nanowire has excellent properties for detection of DENV with outstanding repeatability and reproducibility performances.

Keywords – Dengue fever (DF); Deoxyribonucleic acid (DNA); Electrical detection; Molecular gate control; Nanolithography; Silicon nanowire biosensor

Corresponding Author: Mohammad Nuzaihan Md Nor
Corresponding Author’s Email: m.nuzaihan@unimap.edu.my

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3rdRC4Bs 2016 Conference by AIMST University

April 12, 2016 By Editor

The 3rd Regional Conference on Biosensors, Biodiagnostics, Biochips and Biotechnology 2016 (3rdRC4Bs-2016). The conference is going to be organized by the AIMST University, Malaysia in collaboration with King Mongkut’s University of Technology Thonburi, Thailand; Universiti Malaysia Perlis, Malaysia and Universiti Teknologi MARA, Malaysia. The conference will be held at the AIMST University, Kedah, Malaysia from 20–22 April 2016. The 3rdRC4Bs-2016 intends to provide a platform for scientists, researchers and students to share knowledge, challenges, recent advances and future perspectives in the multidisciplinary areas of biosensors, biodiagnostics, biochips and biotechnology.

The 3rdRC4Bs-2016 welcomes academicians, researchers, students, entrepreneurs and industry players to present their works in a friendly and supportive environment. Both international and local speakers in the forefront of biosensors, biodiagnostics, biochips and biotechnology will actively engage in this 3-day event.

The theme of the conference is “State-of-the-Art Achievements and Challenges in Biosensors, Biodiagnostics, Biochips and Biotechnology”.

The scope of the conference includes but not limited to the following:

Biosensors
Biodiagnostics
Biochips
Biotechnology
Applications of biosensors, biodiagnostics and biochips in biotech industry
Current challenges in biotech industry in using biosensors, biodiagnostics and biochips
Emerging fields in biosensors, biodiagnostics, biochips and biotechnological innovations

For more details, please visit here!

Lectures Series at University of Djillali Liabes, Algeria

March 24, 2016 By Editor

Optical measurements on tailored zinc oxide thin films under optimal

March 24, 2016 By Editor

Abstract – ZnO is synthesized by using conventional chemical route which is known as the “sol-gel” method and deposited on glass and silicon substrate. Morphological and optical properties have been investigated using XRD, AFM, FESEM and UV-vis test. In order to optimize the synthesized ZnO thin film, the ZnO thin film is coated with thin film of different thickness associated with various annealing temperature. Thicknesses of ZnO thin film coated for 3, 5 and 9 coating cycles of coating are 40 nm2, 60 nm2 and 200 nm2, respectively. The data report that the grain size of the seed solution increases from 80 nm to 110 nm as the thickness of ZnO thin film increases. As the thin film is treated with annealing temperature from 200°C to 450°C, the grain size of thin film also increases from 100 nm2 to 450 nm2. The RMS value of thin film also increases due to intense surface roughness on ZnO thin film. The band gap value of thin film decreased from 3.26 eV to 3.18 eV for coating ZnO thin film with thickness 40 nm2-200 nm2.

Keywords – Band gap, Grain size, Thin film, UV-vis, XRD, ZnO

Corresponding Author: Uda Hashim
Corresponding Author’s Email: uda@unimap.edu.my

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